technical data sheet 6 lake street, lawrence, ma 01841 gort road business park, ennis, co. clare, ireland 1-800-446-1158 / (978) 620-2600 / fax: (978) 689-0803 tel: +353 (0) 65 6840044 fax: +353 (0) 65 6822298 website: http: //www.microsemi.com low power pnp silicontransistor qualified per mil-prf-19500/177 t4-lds-0187 rev. 1 (101882) page 1 of 3 devices levels 2n1131 2n1132 jan 2n1131l 2N1132L jantx jantxv absolute maximum ratings (t c = +25c unless otherwise noted) parameters / test conditions symbol value unit collector-emitter voltage v ceo 40 vdc collector-base voltage v cbo 50 vdc emitter-base voltage v ebo 5.0 vdc collector current i c 600 madc total power dissipation @ t a = +25c (1) @ t c = +25c (2) p t 0.6 2.0 w operating & storage junction temperature range t j , t stg -65 to +200 c notes: 1/ derate linearly 3.43mw/c for t a > +25c 2/ derate linearly 11.4mw/c for t c > +25c electrical characteristics (t a = +25c, unless otherwise noted) parameters / test conditions symbol min. max. unit off charactertics collector-emitter breakdown voltage v (br)ceo vdc i c = 10madc 40 collector- base breakdown voltage v (br)cbo vdc i c = 10adc 50 emitter-base cutoff current i ebo v eb = 5.0vdc 100 adc collector-emitter cutoff current i cer madc v ce = 50vdc, r be 10 ohms 10 collector-base cutoff current i cbo v cb = 50vdc v cb = 30vdc 10 1.0 adc to-39 2n1131, 2n1132 to-5 2n1131l, 2N1132L
technical data sheet 6 lake street, lawrence, ma 01841 gort road business park, ennis, co. clare, ireland 1-800-446-1158 / (978) 620-2600 / fax: (978) 689-0803 tel: +353 (0) 65 6840044 fax: +353 (0) 65 6822298 website: http: //www.microsemi.com t4-lds-0187 rev. 1 (101882) page 2 of 3 electrical characteristics (t a = +25c, unless otherwise noted) (cont.) parameters / test conditions symbol min. max. unit on charactertics (3) forward-current transfer ratio h fe i c = 150madc, v ce = 10vdc 2n1131, l 2n1132, l 20 30 45 90 i c = 5.0madc, v ce = 10vdc 2n1131, l 2n1132, l 15 25 collector-emitter saturation voltage v ce(sat) vdc i c = 150madc, i b = 15madc 1.3 base-emitter saturation voltage v be(sat) vdc i c = 150madc, i b = 15madc 1.5 dynamic characteristics parameters / test conditions symbol min. max. unit small-signal short-circuit forw ard-current transfer ratio i c = 1.0madc, v ce = 5.0vdc, f = 1.0khz 2n1131, l 2n1132, l h fe 15 30 50 90 i c = 5.0madc, v ce = 10vdc, f = 1.0khz 2n1131, l 2n1132, l 20 30 small-signal open-circuit output admittance h ob mho i c = 1.0madc, v ce = 5.0vdc, f = 1.0khz i c = 5.0madc, v ce = 10vdc, f = 1.0khz 1.0 5.0 small-signal short-circuit input impedance ? i c = 1.0madc, v ce = 5.0vdc, f = 1.0khz i c = 5.0madc, v ce = 10vdc, f = 1.0khz h ib 25 35 10 magnitude of common emitter small-signal short circuit forward-current transfer ratio |h fe | i c = 50madc, v ce = 10vdc, f = 20mhz 2n1131, l 2n1132, l 2.5 3.0 20 20 output capacitance c obo pf v cb = 10vdc, i e = 0, 100 khz f 1.0mhz 4.5 iutput capacitance c ibo pf v eb = 0.5vdc, i c = 0, 100 khz f 1.0mhz 80 switching characteristics parameters / test conditions symbol min. max. unit turn-on time + turn-off time (see figure 2 of mil-prf-177) t on + t off 50 s (3) pulse test: pulse width = 300 s, duty cycle 2.0%
technical data sheet 6 lake street, lawrence, ma 01841 gort road business park, ennis, co. clare, ireland 1-800-446-1158 / (978) 620-2600 / fax: (978) 689-0803 tel: +353 (0) 65 6840044 fax: +353 (0) 65 6822298 website: http: //www.microsemi.com t4-lds-0187 rev. 1 (101882) page 3 of 3 notes: 1. dimensions are in inches. 2. millimeters are given for general information only. 3. beyond r (radius) maximum, tw shall be held for a minimum length of .011 inch (0.28 mm). 4. dimension tl measured from maximum hd. 5. body contour optional within zone defined by hd, cd, and q. 6. cd shall not vary more than .010 inch (0.25 mm) in zone p. this zone is controlled for automatic handling. 7. leads at gauge plane .054 +.001, -.000 inch (1.37 +0.03, -0.00 mm) below seating plane shall be within .007 inch (0.18 mm) radius of true position (tp) at maximum material condition (mmc) relative to tab at mmc. the device may be measured by direct methods or by gauging procedure. 8. dimension lu applies between l 1 and l 2 . dimension ld applies between l 2 and ll minimum. diameter is uncontrolled in and beyond ll minimum. 9. all three leads. 10. the collector shall be internally connected to the case. 11. dimension r (radius) applies to both inside corners of tab. 12. in accordance with asme y14.5m , diameters are equivalent to x symbology. 13. lead 1 = emitter, lead 2 = base, lead 3 = collector. 14. * for l-suffix or non-s-suffix devices (to-5), dimension ll = 1.5 inches (38.10 mm) min. and 1.75 inches (44.45 mm) max. for non-l suffix types (to-39), dimension ll = .5 inch (12.70 mm) min. and .750 inch (19.05 mm) max.. * figure 1. physical dimensions 2n1131 and 2n1132 ( to-39), 2n1131l and 2N1132L (to-5). package dimensions dimensions symbol inches millimeters note min max min max cd .305 .335 7.75 8.51 ch .240 .260 6.10 6.60 hd .335 .370 8.51 9.40 lc .200 tp 5.08 tp 6 ld .016 .021 0.41 0.53 7, 8 ll .500 .750 12.70 19.05 7, 8, 12 lu .016 .019 0.41 0.48 7, 8 l 1 .050 1.27 7, 8 l 2 .250 6.35 7, 8 p .100 2.54 q .050 1.27 5 tl .029 .045 0.74 1.14 4 tw .028 .034 0.71 0.86 3 r .010 0.25 10 45 tp 45 tp 6
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